Symbol eta
the achieved energy efficiency of the best available accelerator at time t , measured in tera-operations per second per watt.
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That structural fact can be written compactly. If is the (roughly fixed, application-set) power envelope in watts and is the achieved energy efficiency of the best available accelerator at time t , measured in tera-operations per second per watt, then the usable on-device compute throughput is approximately
the achieved energy efficiency of the best available accelerator at time t , measured in tera-operations per second per watt.
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Equation 2 · Edge AI & Electronics
This mathematical expression combines the displayed quantities; its precise role follows from the surrounding article text.
That structural fact can be written compactly. If is the (roughly fixed, application-set) power envelope in watts and is the achieved energy efficiency of the best available accelerator at time t , measured in tera-operations per second per watt, then the usable on-device compute throughput is approximately
Equation 6 · Edge AI & Electronics
This mathematical expression combines the displayed quantities; its precise role follows from the surrounding article text.
This is not a scaling law in the sense of a fitted curve; it is closer to an accounting identity, and its value is in what it rules out. Because is nearly constant for a given device class, essentially all of the growth in on-device model capability that anyone can expect by 2035 has to come from growth in — from architecture, from process, from numerical precision, and, in the discontinuity scenario below, from a different physical mechanism entirely. Reuther and colleagues’ survey of commercial AI accelerators, which compiles peak-performance and power figures across dozens of parts and computes efficiency relative to that peak, documents exactly this pattern:…
Equation 7 · Edge AI & Electronics
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itself is not free to grow indefinitely inside conventional CMOS. Horowitz, Alon, and Patil’s widely cited analysis of chip power scaling made the mechanism explicit: as feature size shrank across recent nodes, supply voltage and threshold voltage stopped scaling down at the historical rate, because pushing them lower drives subthreshold leakage up sharply, and power — not transistor count — became the binding limiter on how fast or how densely a chip could usefully run [ 11 ] . That single fact is the quiet premise behind most edge-AI marketing that promises “10x more efficient” silicon every generation: within one switching technology, each further gain in gets structurally…
Equation 8 · Edge AI & Electronics
This mathematical expression combines the displayed quantities; its precise role follows from the surrounding article text.
itself is not free to grow indefinitely inside conventional CMOS. Horowitz, Alon, and Patil’s widely cited analysis of chip power scaling made the mechanism explicit: as feature size shrank across recent nodes, supply voltage and threshold voltage stopped scaling down at the historical rate, because pushing them lower drives subthreshold leakage up sharply, and power — not transistor count — became the binding limiter on how fast or how densely a chip could usefully run [ 11 ] . That single fact is the quiet premise behind most edge-AI marketing that promises “10x more efficient” silicon every generation: within one switching technology, each further gain in gets structurally…
Equation 11 · Edge AI & Electronics
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The compute-per-watt equation above has an implicit assumption baked into it: that 's growth comes from refining one underlying switching technology, conventional digital CMOS. The clearest documented case for how that assumption could break is analog, compute-in-memory silicon, which does not perform a multiply-accumulate as a sequence of digital switching events at all, but as a physical operation — current summation on a resistive or phase-change element — colocated with storage.
Equation guide → · Article →Equation 12 · Edge AI & Electronics
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Scenario A — incremental compounding. continues to improve mainly through architecture, quantization, and process refinements within digital CMOS, compounding at a slowing but still positive rate as the Horowitz-style voltage floor is approached more closely each generation. Event cameras and neuromorphic processors remain concentrated in the applications where their narrow strengths already fit — industrial sensing, some automotive perception, always-on wake tasks — without breaking into general-purpose vision. On-device privacy architecture spreads because it is commercially and operationally convenient under AI Act-style obligations, not because any law explicitly mandates it.…
Equation guide → · Article →Equation 13 · Edge AI & Electronics
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Scenario B — an in-memory or neuromorphic discontinuity. Compute-in-memory silicon, or a comparably disruptive alternative to digital CMOS switching, clears the manufacturability and yield bar that has so far kept it in research and niche deployments, and takes a step change rather than a compounding curve for at least one significant device class. This scenario assumes that a design house or foundry solves device-to-device variability and endurance at commercial volumes — the specific engineering problem that has kept every in-memory demonstration to date at the scale of tens of megabytes of weights rather than production-scale models.
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