Equation 13 · Edge AI Electronics and Sensor Systems in 2035: Scenarios, Signals, and Falsifiable Predictions
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Scenario B — an in-memory or neuromorphic discontinuity. Compute-in-memory silicon, or a comparably disruptive alternative to digital CMOS switching, clears the manufacturability and yield bar that has so far kept it in research and niche deployments, and takes a step change rather than a compounding curve for at least one significant device class. This scenario assumes that a design house or foundry solves device-to-device variability and endurance at commercial volumes — the specific engineering problem that has kept every in-memory demonstration to date at the scale of tens of megabytes of weights rather than production-scale models.
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