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Equation 6 · Part 1 · Patterning at the Limit: What Actually Happens When a Chip Is Manufactured

Symbol k_1

k1=0.25k_1 = 0.25
k1k_1

What this part means

a dimensionless process factor absorbing illumination scheme, mask engineering and resist behaviour.

Its job in the formula

k1k_1 is part of the quantity the equation computes from the expression on the right.

Where the article explains it

where λ\lambda is the exposure wavelength, NA\mathrm{NA} is the numerical aperture of the projection optics, and k1k_1 is a dimensionless process factor absorbing illumination scheme, mask engineering and resist behaviour.

The passage around this formula

where λ\lambda is the exposure wavelength, NA\mathrm{NA} is the numerical aperture of the projection optics, and k1k_1 is a dimensionless process factor absorbing illumination scheme, mask engineering and resist behaviour. Two-beam interference sets a hard floor: for a periodic line-and-space pattern the smallest printable half-pitch is λ\lambda / (2\,NA\mathrm{NA}) , which is k1k_1 = 0.25 in the convention where R is a half-pitch. Everything the industry calls resolution enhancement — off-axis illumination, phase shifting, optical proximity correction, inverse lithography — is an attempt to drive k1k_1 down toward that floor without printing garbage.

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Learn the underlying idea

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Sources cited in the article section

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