Symbol θ
θ is a part of this expression. Its role is fixed by the surrounding article and by the operations shown in the formula.
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describes why the stack works at all: at near-normal incidence, is small and is close to one, so the first-order condition reduces to roughly 2d , meaning a bilayer period d of a little under 7 nanometers should reflect strongly somewhere near 13.5–14 nanometers. Measurement bears this out closely rather than exactly: one recent study of Mo/Si multilayers built for EUV optics reports bilayer periods of 6.97 to 7.07 nanometers across fifty complete bilayers, with reflectivity near 65 percent at near-normal incidence around 10.7 degrees, interface widths of about 0.3 to 0.4 nanometers combining roughness and interdiffusion, and surface roughness held below 0.2…
θ is a part of this expression. Its role is fixed by the surrounding article and by the operations shown in the formula.
Read this term in its guide →Read this expression with the definitions, units, and assumptions supplied by the article.
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Equation 3 · Semiconductors
This mathematical expression combines the displayed quantities; its precise role follows from the surrounding article text.
describes why the stack works at all: at near-normal incidence, is small and is close to one, so the first-order condition reduces to roughly 2d , meaning a bilayer period d of a little under 7 nanometers should reflect strongly somewhere near 13.5–14 nanometers. Measurement bears this out closely rather than exactly: one recent study of Mo/Si multilayers built for EUV optics reports bilayer periods of 6.97 to 7.07 nanometers across fifty complete bilayers, with reflectivity near 65 percent at near-normal incidence around 10.7 degrees, interface widths of about 0.3 to 0.4 nanometers combining roughness and interdiffusion, and surface roughness held below 0.2…
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