What does this equation mean?

with $r_i$ the via’s metal radius, $r_o$ the outer radius of the oxide liner, and $\varepsilon_{\text{ox}}$ the liner’s permittivity, while the bulk silicon beyond it contributes a finite shunt resistance rather than an open circuit. A TSV’s insertion loss is therefore not one number but a function of frequency, set by which of those two paths — the liner’s capacitance or the silicon’s resistance — is doing more of the work at a given frequency. Wang and colleagues, testing single, dual-redundant and quad-redundant TSV structures built on high-resistivity silicon for millimetre-wave use, measured a single via’s insertion loss at 0.22 dB at 40 gigahertz, essentially matched by the dual-redundant structure’s 0.19 dB, while the quad-redundant structure rose to 0.46 dB at the same frequency [ 8 ] . The redundant designs exist to hedge against any one via failing or plating unevenly, but the extra vias are not free: the authors report that “the main factors that affect the S-parameters are inductance and resistance” as frequency climbs, and the coupling between multiple closely spaced redundant vias adds exactly the inductance that erodes the quad structure’s advantage over a single, well-made via [ 8 ] . A denser via field is not electrically “more of the same via”; it changes which physical effect is setting the loss budget.