Equation 1 · Part 3 · How Chiplets and Advanced Packaging Actually Work

Symbol varepsilon_ox

C'_{\text{ox}} \;=\; \frac{2\pi\varepsilon_{\text{ox}}}{\ln\!\left(r_{\text{o}}/r_{\text{i}}\right)},

\varepsilon_{\text{ox}}

What this part means

the liner’s permittivity.

Its job in the formula

varepsilo $n_o$ x occurs above the fraction bar. The numerator is divided by the entire denominator below it.

Full expressionSymbol varepsilon_oxArticle meaning

Where the article explains it

with $r_i$ the via’s metal radius, $r_o$ the outer radius of the oxide liner, and $\varepsilon_{\text{ox}}$ the liner’s permittivity, while the bulk silicon beyond it contributes a finite shunt resistance rather than an open circuit.

The passage around this formula

…structure — copper core, oxide liner, conductive silicon beyond it — the liner behaves as a capacitor per unit length, $C'_{\text{ox}} \;=\; \frac{2\pi\varepsilon_{\text{ox}}}{\ln\!\left(r_{\text{o}}/r_{\text{i}}\right)}$ . with $r_i$ the via’s metal radius, $r_o$ the outer radius of the oxide liner, and $\varepsilon_{\text{ox}}$ the liner’s permittivity, while the bulk silicon beyond it contributes a finite shunt resistance rather than an open circuit. A TSV’s insertion loss is therefore not one number but a function of frequency, set by which of those two paths — the liner’s capacitance or the…

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Learn the underlying idea

A subscript is a label attached below a symbol. It often selects a time step, component, category, or member of a sequence.

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Sources cited in the surrounding passage

[8] A RF Redundant TSV Interconnection for High Resistance Si Interposer ↗

These citations provide research context; check each source for the exact claim it supports.