subscript

The passage around this formula

where $C_{\mathrm{dep}}$ is the capacitance of the depletion region the gate does not fully control and $C_{\mathrm{ox}}$ is the gate’s own oxide capacitance. As $C_{\mathrm{dep}}$ falls toward zero, S falls toward its physical floor of about 60 millivolts per decade at room temperature. Wrapping the gate fully around the channel is, in this equation, a direct attack on $C_{\mathrm{dep}}$ : there is no substrate face left for the depletion region to leak through, because there is no substrate face left at all. A review of nanosheet and nanowire scaling states the qualitative result plainly — gate-all-around structures have better short-channel suppression than the FinFETs they are replacing — while…

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