Equation 6 · Comparing the Main Approaches to Chiplets and Advanced Packaging
What does this equation mean?
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the power dissipated at that tier and each is the thermal resistance of one layer already between that tier and the heat sink — die bulk, bonding interface, or an intervening active tier. Read the equation part by part below; each part has a contextual explanation and a link to its mathematical background.
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Symbol P
the power dissipated at that tier and each is the thermal resistance of one layer already between that tier and the heat sink — die bulk, bonding interface, or an intervening active tier.
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What the article says around this equation
where P is the power dissipated at that tier and each is the thermal resistance of one layer already between that tier and the heat sink — die bulk, bonding interface, or an intervening active tier. A tier two layers from the heat-removal face inherits the resistance of everything below it in a way a single die never does, which is why thermal co-design and power-tier placement, not raw stack height, are what determine whether a given 3D design is thermally viable.
Sources cited in the article section
- [6] Chiplets: Piecing Together the Next Generation of Chips (Part I) ↗
- [11] Architecture, Dataflow and Physical Design Implications of 3D-ICs for DNN-Accelerators ↗
These citations give research context. Read each source to check which claims it supports.
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