Equation 5 · Chiplets and Advanced Packaging in Practice: An Advanced Technical Guide
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The yield model above is the honest starting point for that comparison, and its assumptions matter more than its output. It assumes each die’s yield is independent of the others bonded alongside it, which is optimistic — a bonding-process defect (misalignment, contamination, a warped interposer) can degrade several dies on one assembly simultaneously, correlating what the simple product model treats as independent draws. It also ignores that bond yield itself is a separate term: even with every input die screened good, the bonding step introduces its own defect rate that a pure per-die KGD program does nothing to fix. A more complete model multiplies the per-die yield product by a separate…
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The yield model above is the honest starting point for that comparison, and its assumptions matter more than its output. It assumes each die’s yield is independent of the others bonded alongside it, which is optimistic — a bonding-process defect (misalignment, contamination, a warped interposer) can degrade several dies on one assembly simultaneously, correlating what the simple product model treats as independent draws. It also ignores that bond yield itself is a separate term: even with every input die screened good, the bonding step introduces its own defect rate that a pure per-die KGD program does nothing to fix. A more complete model multiplies the per-die yield product by a separate assembly yield term, and it is that assembly-yield term — not per-die screening — that improves as bonder alignment tolerance, planarization quality, and interposer warpage control mature. This is why the practice described across the preceding three gates functions as one system: tightening KGD screening raises the terms, tightening bonder alignment and thermomechanical control raises the assembly-yield term, and only both together make the arithmetic work at the die counts modern AI accelerator packages actually use.
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