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Equation 1 · Part 8 · Advanced Semiconductor Fabrication in 2035: Scenarios, Signals, and Falsifiable Predictions

Denominator: CPP × H_cell

D∝1CPP×HcellD \propto \frac{1}{\mathrm{CPP} \times H_{\mathrm{cell}}}
CPP×Hcell\mathrm{CPP} \times H_{\mathrm{cell}}

What this part means

The complete quantity below the fraction bar; it must be nonzero for this division.

Its job in the formula

CPP × HcH_cell occurs below the fraction bar. The quantity above the bar is divided by this expression; zero is excluded as a denominator.

The passage around this formula

Analysis. The more granular figures behind that roadmap show what CFET is actually buying, and expose the assumption underneath the 2033 date. Reporting on the same 2026 forum gives contacted poly pitch (CPP) and standard-cell height across successive nodes: A14 in 2028 at roughly 45-nanometre CPP and 115-nanometre cell height, with High-NA EUV introduced at that stage; A10 around 2030 holding CPP near 42 nanometres, a point past which “further scaling of CPP is expected to face fundamental limitations”; A7 — CFET’s likely starting point, with adoption itself described as uncertain — at that same 42-nanometre CPP; and A5, arriving around 2035–2036, still at 42-nanometre CPP but with cell…

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Learn the underlying idea

A fraction a/b means a divided by b. The top number is the numerator; the bottom number is the denominator, and it cannot be zero.

Open the illustrated fractions: division written vertically guide →

Sources cited in the surrounding passage

These citations provide research context; check each source for the exact claim it supports.